US Patent Issued to Intel on Aug. 25 for "Capacitor structure embedded within source or drain region" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,851, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Capacitor structure embedded within source or drain region" was invented by Sourav Dutta (Hillsboro, Ore.), Nazila Haratipour (Portland, Ore.), Vachan Kumar (Hillsboro, Ore.), Uygar E. Avci (Portland, Ore.), Shriram Shivaraman (Hillsboro, Ore.) and Sou-Chi Chang (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form a semiconductor device that has a capacitor structure integrated with the source or drain region of the semiconductor device. A given semiconductor device includes one or more semiconductor regions extending in a fir...