ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,654, issued on Aug. 11, was assigned to Intel Corp. (Santa Clara, Calif.).
"Technologies for low-leakage on-chip capacitors" was invented by Sameer Shekhar (Portland, Ore.), Amit K. Jain (Sherwood, Ore.) and Chin Lee Kuan (Bentong, Malaysia).
According to the abstract* released by the U.S. Patent & Trademark Office: "Technologies for low-leakage and low series resistance on-chip capacitors are disclosed. In the illustrative embodiment, each electrode of a capacitor is formed from two metal layers and vias between the metal layers. A high-k dielectric layer is between the metal layers. The electrodes are displaced relative to each other on the plane defined by the high-k dielectri...