US Patent Issued to Intel on Aug. 11 for "Contacts with interface fermi level tuning layers" (California, Oregon Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,691, issued on Aug. 11, was assigned to Intel Corp. (Santa Clara, Calif.).

"Contacts with interface fermi level tuning layers" was invented by Prashant Majhi (San Jose, Calif.) and Anand Murthy (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transition metal dichalcogenide (TMD) monolayers are positioned between a contact metal and a semiconductor to pin the Fermi level at the metal-semiconductor interface. The pinned Fermi level can provide for a lower Schottky barrier height between the contact metal and semiconductor than if no TMD were present at the contact metal-semiconductor interface. The height of the Schottky barrier can be ...