ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,948, issued on Aug. 11, was assigned to Intel Corp. (Santa Clara, Calif.).
"Conductive via structures for gate contact or trench contact" was invented by Leonard P. Guler (Hillsboro, Ore.), Tahir Ghani (Portland, Ore.) and Charles H. Wallace (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Conductive via structures for gate contact or trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures. A plurality of dielectric spacers has an uppermost surface co-planar with an uppermost surface of a plurality of gate structures and co-planar with an uppermost surface of a plurality of c...