ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,276, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.).
"Mid-valent molybdenum complexes for thin film deposition" was invented by Charles Cameron Mokhtarzadeh (Portland, Ore.), Scott B. Clendenning (Portland, Ore.) and Matthew V. Metz (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein are IC devices that include molybdenum or a molybdenum compound, such as compounds including oxygen or nitrogen. The molybdenum may be deposited at a high concentration, e.g., at least 50% atomic density. Also described herein are mid-valent molybdenum precursors for depositing molybdenum, and reactions for producing the...