ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,814, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.).
"Lateral diodes in stacked transistor technologies" was invented by Nicholas A. Thomson (Hillsboro, Ore.), Ayan Kar (Portland, Ore.), Benjamin Orr (Beaverton, Ore.), Kalyan C. Kolluru (Portland, Ore.), Nathan D. Jack (Forest Grove, Ore.), Patrick Morrow (Portland, Ore.), Cheng-Ying Huang (Hillsboro, Ore.) and Charles C. Kuo (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuits including lateral diodes. In an example, diodes are formed with laterally neighboring source and drain regions (diffusion regions) configured with different polarity epitax...