US Patent Issued to Intel on April 7 for "Bilayer memory stacking with lines shared between bottom and top memory layers" (Oregon Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,599,032, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.).

"Bilayer memory stacking with lines shared between bottom and top memory layers" was invented by Abhishek A. Sharma (Hillsboro, Ore.), Noriyuki Sato (Hillsboro, Ore.), Van H. Le (Beaverton, Ore.), Sarah Atanasov (Beaverton, Ore.), Hui Jae Yoo (Hillsboro, Ore.), Bernhard Sell (Portland, Ore.), Pei-hua Wang (Beaverton, Ore.), Travis W. Lajoie (Forest Grove, Ore.), Chieh-Jen Ku (Portland, Ore.), Juan G. Alzate-Vinasco (Tigard, Ore.) and Fatih Hamzaoglu (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "IC devices implementing bilayer stacking with lines shared betwee...