US Patent Issued to Intel on April 21 for "Multi-layered source and drain contacts for a thin film transistor (TFT) structure" (Oregon Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,582, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.).

"Multi-layered source and drain contacts for a thin film transistor (TFT) structure" was invented by Abhishek Anil Sharma (Portland, Ore.), Travis W. Lajoie (Forest Grove, Ore.), Van H. Le (Beaverton, Ore.), Timothy Jen (Portland, Ore.), Kamal H. Baloch (Portland, Ore.), Mark Armstrong (Portland, Ore.), Albert B. Chen (Portland, Ore.), Moshe Dolejsi (Portland, Ore.), Shailesh Kumar Madisetti (Portland, Ore.), Afrin Sultana (Portland, Ore.), Deepyanti Taneja (Happy Valley, Ore.) and Vishak Venkatraman (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques ...