US Patent Issued to Intel on April 21 for "Interconnect structures with nitrogen-rich dielectric material interfaces for low resistance vias in integrated circuits" (Oregon Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,806, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.).

"Interconnect structures with nitrogen-rich dielectric material interfaces for low resistance vias in integrated circuits" was invented by Ming-Yi Shen (Portland, Ore.), Nita Chandrasekhar (Portland, Ore.), Blake Bluestein (Hillsboro, Ore.), Tiffany Zink (Sheridan, Ore.) and Shaestagir Chowdhury (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit structures including an interconnect feature without a higher-resistance liner material. In absence of a liner, metal of low resistance directly contacts an adjacent dielectric material, enabling lower...