US Patent Issued to INTEL NDTM US on Aug. 18 for "Engineered dielectric profile for high aspect-ratio 3D NAND structures" (New Mexico, California, Arizona Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,902, issued on Aug. 18, was assigned to INTEL NDTM US LLC (Santa Clara, Calif.).

"Engineered dielectric profile for high aspect-ratio 3D NAND structures" was invented by Vijay Saradhi Mangu (Albuquerque, N.M.), Henok T. Mebrahtu (Rio Rancho, N.M.), Agus Tjandra (Milpitas, Calif.), Ee Ee Eng (Peoria, Ariz.) and Randy J. Koval (Albuquerque, N.M.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatus of engineered dielectric profile for high aspect-ratio (AR) 3D NAND structures. The 3D NAND structures comprise a semiconductor structure having multiple stacked memory tiers comprising 2D arrays of memory cells that are charged using vertica...