US Patent Issued to Institute of Semiconductors, Chinese Academy of Sciences on Sept. 1 for "Method for fabricating semiconductor structure having enhanced hole linear Rashba spin-orbit coupling effect" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,208, issued on Sept. 1, was assigned to Institute of Semiconductors, Chinese Academy of Sciences (Beijing).

"Method for fabricating semiconductor structure having enhanced hole linear Rashba spin-orbit coupling effect" was invented by Junwei Luo (Beijing), Jiaxin Xiong (Beijing), Yang Liu (Beijing), Shan Guan (Beijing) and Shushen Li (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor structure having an enhanced hole linear Rashba spin-orbit coupling effect includes: providing a substrate; and growing a germanium quantum well on the substrate. A silicon atomic layer is inserted at an interface between a ...