US Patent Issued to Institute of Semiconductors, Chinese Academy of Sciences on March 3 for "Fabrication method for semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,659, issued on March 3, was assigned to Institute of Semiconductors, Chinese Academy of Sciences (Beijing).

"Fabrication method for semiconductor structure" was invented by Junwei Luo (Beijing), Jiaxin Xiong (Beijing), Yang Liu (Beijing), Shan Guan (Beijing) and Shushen Li (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method for a semiconductor structure with a hole spin qubit includes: providing a substrate; growing a germanium quantum well on the substrate, in which the germanium quantum well is an inclined quantum well structure grown in a [110] direction, and the germanium quantum well is grown by a complementary metal ox...