US Patent Issued to INSTITUTE OF MICROELECTRONICS. CHINESE ACADEMY OF SCIENCES on Sept. 15 for "Memory device, method of manufacturing memory device, and electronic apparatus including memory device" (New York Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,740,039, issued on Sept. 15, was assigned to INSTITUTE OF MICROELECTRONICS. CHINESE ACADEMY OF SCIENCES (Beijing).

"Memory device, method of manufacturing memory device, and electronic apparatus including memory device" was invented by Huilong Zhu (Poughkeepsie, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory device, a method of manufacturing the same, and an electronic apparatus. The memory device includes: first to fourth connection line layers sequentially disposed in a vertical direction, and adjacent connection line layers respectively include conductive lines extending in directions intersected; a plurality of memory ce...