US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Sept. 22 for "Method for correcting lithography pattern of surface plasma" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,743,017, issued on Sept. 22, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Method for correcting lithography pattern of surface plasma" was invented by Le Ma (Beijing), Yayi Wei (Beijing), Libin Zhang (Beijing) and Jianfang He (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for correcting a lithography pattern of a surface plasma, including: forming a plurality of test patterns on a test mask; exposing a photoresist layer by using the test mask containing the test patterns to form a plurality of photoresist patterns; establishing a first data table based on a correspondence between t...