US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Oct. 20 for "Memory cell and manufacturing method thereof, three-dimensional memory and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,460, issued on Oct. 20, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Memory cell and manufacturing method thereof, three-dimensional memory and operation method thereof" was invented by Gang Zhang (Beijing), Chunlong Li (Beijing), Zongliang Huo (Beijing) and Tianchun Ye (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell and manufacturing method thereof, and a three-dimensional memory and an operation method thereof. The memory cell includes: a stack on a substrate and including: channel holes passing through the stack and part of the substrate, the stack including the second stack material...