US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Nov. 3 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,362, issued on Nov. 3, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Semiconductor device and method for manufacturing the same" was invented by Junjie Li (Beijing), Enxu Liu (Beijing), Na Zhou (Beijing), Jianfeng Gao (Beijing), Junfeng Li (Beijing), Yongliang Li (Beijing), Jun Luo (Beijing) and Wenwu Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for manufacturing the same. The method comprises: providing a substrate; forming a fin, a dummy gate, a first spacer, and a hard mask on a surface of the substrate; etching the substrate to form a groove located direc...