US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on May 5 for "Folded channel gallium nitride based field-effect transistor and method of manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,013, issued on May 5, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Folded channel gallium nitride based field-effect transistor and method of manufacturing the same" was invented by Sen Huang (Beijing), Qimeng Jiang (Beijing), Xinyue Dai (Beijing), Xinhua Wang (Beijing) and Xinyu Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The folded channel gallium nitride based field-effect transistor includes: a base layer; a multi-heterojunction layer, including a channel layer and a barrier layer alternatingly stacked from bottom to top on a gallium nitride semi-insulating layer; a gallium nitride control ...