US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on May 12 for "Method for manufacturing semiconductor and semiconductor" (Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,391, issued on May 12, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Method for manufacturing semiconductor and semiconductor" was invented by Junjie Li (Beijing), Enxu Liu (Beijing), Na Zhou (Beijing), Jianfeng Gao (Beijing), Junfeng Li (Beijing), Jun Luo (Beijing) and Wenwu Wang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor and a semiconductor. The method includes: providing a substrate, wherein an active region trench is on the substrate, and a channel stack of a gate-all-around transistor is formed in the active region trench, the active region trench is...