US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on March 3 for "Memory device and method of manufacturing the same, and electronic apparatus including memory device" (New York Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,622, issued on March 3, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Memory device and method of manufacturing the same, and electronic apparatus including memory device" was invented by Huilong Zhu (Poughkeepsie, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a method of manufacturing the same, and an electronic apparatus including the same. The memory device includes: a plurality of cell active layers vertically stacked on a substrate, each cell active layer including a lower source/drain region and an upper source/drain region located at different vertical heights and a channel regio...