US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on March 24 for "Magnetoresistive device, method for changing resistance state thereof, and synapse learning module" (Chinese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,423, issued on March 24, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Magnetoresistive device, method for changing resistance state thereof, and synapse learning module" was invented by Guozhong Xing (Beijing), Di Wang (Beijing), Huai Lin (Beijing), Long Liu (Beijing), Yu Liu (Beijing), Hangbing Lv (Beijing), Changqing Xie (Beijing), Ling Li (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a field of memory technical, and in particular to a magnetoresistive device, a method for changing a resistance state of the magnetoresistive device, and a s...