US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on June 30 for "Method and apparatus for optimizing lithography quality, electronic device, medium and program product" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,670,302, issued on June 30, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Method and apparatus for optimizing lithography quality, electronic device, medium and program product" was invented by Lihong Liu (Beijing), Yayi Wei (Beijing) and Huwen Ding (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for optimizing a lithography quality, including: determining a wave function stray term introduced by a surface roughness of a metal film layer based on Eigen matrix method and Bloch theorem; inputting the wave function stray term into a lithography quality deviation mathematical model for ca...