US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on July 28 for "Three-dimensional static random-access memory and preparation method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,436, issued on July 28, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Three-dimensional static random-access memory and preparation method therefor" was invented by Huaxiang Yin (Beijing), Xiang Lin (Beijing), Yanna Luo (Beijing) and Zhanfeng Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method for manufacturing a three-dimensional static random-access memory, including: manufacturing a first semiconductor structure including multiple MOS transistors and a first insulating layer thereon; bonding a first material layer to the first insulating layer to form a first substrate layer; manufacturi...