US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on July 21 for "Semiconductor device with spacer and C-shaped channel portion, method of manufacturing semiconductor device with spacer and C-shaped channel portion, and electronic apparatus" (New York Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,214, issued on July 21, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Semiconductor device with spacer and C-shaped channel portion, method of manufacturing semiconductor device with spacer and C-shaped channel portion, and electronic apparatus" was invented by Huilong Zhu (Poughkeepsie, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor device with a spacer and a C-shaped channel portion, a method of manufacturing the same, and an electronic apparatus including the semiconductor device. The semiconductor device may include: a channel portion on a substrate, wherein the channel ...