US Patent Issued to Inpria on July 21 for "Gas-based development of organometallic resist in an oxidizing halogen-donating environment" (Belgian, American Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,778, issued on July 21, was assigned to Inpria Corp. (Corvallis, Ore.).

"Gas-based development of organometallic resist in an oxidizing halogen-donating environment" was invented by Peter De Schepper (Winegem, Belgium) and Brian J. Cardineau (Corvallis, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method provides for performing a dry development of an organotin composition patterned with radiation and having a latent image. The method comprises developing a structure with a gas comprising a halogen based developer and an oxygen source compound, wherein the structure comprises a substrate with layer of composition with a latent image with re...