US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on May 19 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,165, issued on May 19, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China).

"Semiconductor device and method for manufacturing the same" was invented by Fu Chen (Suzhou City, China), Ronghui Hao (Suzhou City, China) and King Yuen Wong (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first to a third nitride-based semiconductor layers, a source electrode, a drain electrode and a gate electrode. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than a bandgap of the first nitride-based semiconductor ...