US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on May 12 for "Nitride-based semiconductor device with gate protection layer and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,369, issued on May 12, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China).

"Nitride-based semiconductor device with gate protection layer and method for manufacturing the same" was invented by Liuchang Meng (Suzhou City, China), Hung-Yu Chen (Suzhou City, China) and Kaiming Fan (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor device includes a first and second nitride-based semiconductor layers, two or more source/drain (S/D) electrodes, a gate electrode, a doped III-V semiconductor layer, a gate protection layer and a first passivation layer. The doped III-V semiconductor lay...