US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Aug. 25 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,788, issued on Aug. 25, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China).

"Semiconductor device and method for manufacturing the same" was invented by Chuan He (Suzhou City, China), Ronghui Hao (Suzhou City, China) and King Yuen Wong (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor circuit includes a nitride-based semiconductor carrier, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, connectors, a connection line, and a power supply line. The first nitride-based semiconductor layer is disposed over the nitride-based semiconductor carri...