US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Sept. 1 for "Semiconductor device including aluminum concentration that varies as an oscillating function and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,221, issued on Sept. 1, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou City, China).

"Semiconductor device including aluminum concentration that varies as an oscillating function and method for manufacturing the same" was invented by Yi-Lun Chou (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includ...