US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on May 19 for "Semiconductor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,168, issued on May 19, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou City, China).

"Semiconductor device and manufacturing method thereof" was invented by Zhiwen Dong (Zhuhai City, China), Qiyue Zhao (Zhuhai City, China) and Shaopeng Cheng (Zhuhai City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor ...