ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,724,346, issued on Sept. 1, was assigned to Inha University Research and Business Foundation (Incheon, South Korea).

"Underlayer compound for photolithography, multilayered structure formed using the same, and method for manufacturing semiconductor devices using the same" was invented by Jinkyun Lee (Incheon, South Korea), Yejin Ku (Incheon, South Korea) and Gayoung Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an underlayer compound, which improves the resolution and sensitivity of a photoresist layer, restrains the collapse of a photoresist pattern and has improved etching resistance. The underlayer compound ...