US Patent Issued to Infineon Technologies on Sept. 8 for "Semiconductor device with termination structure and field-free region" (German Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,458, issued on Sept. 8, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device with termination structure and field-free region" was invented by Rabie Djemour (Munich) and Anton Mauder (Kolbermoor, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor portion with a first surface at a front side, wherein the semiconductor portion includes an active area, a termination structure laterally surrounding the active area, and a field-free region between the termination structure and a lateral outer surface of the semiconductor portion. The field-free region includes a probe con...