ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,432, issued on Sept. 22, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Method for forming a drift region of a superjunction device" was invented by Michael Hell (Erlangen, Germany) and Dethard Peters (Hoechstadt, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a drift region of a superjunction device includes forming a drift region section having a semiconductor layer with first regions of a first doping type and second regions of a second doping type arranged alternatingly in a first lateral direction. Forming the drift region section includes: forming an implantation mask on top of a first surface of ...