US Patent Issued to Infineon Technologies on Sept. 1 for "Semiconductor device including protruding region" (German Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,184, issued on Sept. 1, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device including protruding region" was invented by Moritz Hauf (Munich) and Frank Dieter Pfirsch (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a second region of a second conductivity type arranged adjacent to the first region at the second surface, the second region including first and second sub-regions, the second sub-region a...