US Patent Issued to Infineon Technologies on May 12 for "Semiconductor device having a field termination structure and a charge balance structure, and method of producing the semiconductor device" (German Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,373, issued on May 12, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device having a field termination structure and a charge balance structure, and method of producing the semiconductor device" was invented by Michael Hell (Erlangen, Germany), Rudolf Elpelt (Erlangen, Germany), Frank Hille (Munich), Caspar Leendertz (Munich) and Armin Willmeroth (Friedberg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate having an active device region that includes a plurality of device cells and a termination region between the active device region and an edge of the s...