US Patent Issued to Infineon Technologies on March 31 for "Silicon carbide device with metallic interface layers and method of manufacturing" (Austrian Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,481, issued on March 31, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Silicon carbide device with metallic interface layers and method of manufacturing" was invented by Ravi Keshav Joshi (Klagenfurt am Worthersee, Austria), Thomas Ralf Siemieniec (Villach, Austria), Werner Schustereder (Villach, Austria), Kristijan Luka Mletschnig (Klagenfurt, Austria) and Axel Konig (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a trench that extends from a first surface into a silicon carbide body. A first doped region and an oppositely doped second doped region...