US Patent Issued to Infineon Technologies on March 31 for "Cell design for MOS-controlled power semiconductor device" (Austrian, German Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,480, issued on March 31, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Cell design for MOS-controlled power semiconductor device" was invented by Thomas Kurzmann (Villach, Austria), Christian Philipp Sandow (Haar, Germany) and Thomas Soellradl (Feldkirchen, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IGBT includes a drift region of a first conductivity type, a plurality of trenches laterally confining both first type mesas having a respective source region and a respective body region and second type mesas. A shield region does for example not laterally overlap with the second type mesa, but only with the first type ...