US Patent Issued to Infineon Technologies on March 17 for "Group III nitride-based transistor device having a conductive redistribution structure" (German Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,712, issued on March 17, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Group III nitride-based transistor device having a conductive redistribution structure" was invented by Albert Birner (Regensburg, Germany), Helmut Brech (Lappersdorf, Germany) and John Twynam (Regensburg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a Group III nitride-based transistor device includes a source electrode, a drain electrode and a gate electrode positioned on a first major surface of a Group III nitride based-based layer, wherein the gate electrode is laterally arranged between the source electrode and the drain electr...