US Patent Issued to Infineon Technologies on June 23 for "RC IGBT and method of producing an RC IGBT" (German Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,699, issued on June 23, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"RC IGBT and method of producing an RC IGBT" was invented by Frank Dieter Pfirsch (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "An RC IGBT includes: an active region with separate IGBT and diode sections; a semiconductor body forming a part of the active region; a first load terminal and control terminal at a first side of the body and a second load terminal at a second side, the control terminal including a control terminal finger that laterally overlaps, in the active region, with the diode section. Control trenches extending into the semiconductor body...