US Patent Issued to Infineon Technologies on June 23 for "Method for forming semiconductor devices using a glass structure attached to a wide band-gap semiconductor wafer" (Austrian, German Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,895, issued on June 23, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Method for forming semiconductor devices using a glass structure attached to a wide band-gap semiconductor wafer" was invented by Roland Rupp (Lauf, Germany), Alexander Breymesser (Villach, Austria), Andre Brockmeier (Villach, Austria), Carsten von Koblinski (Villach, Austria), Francisco Javier Santos Rodriguez (Villach, Austria) and Ronny Kern (Finkenstein, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming semiconductor devices includes: attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconduct...