ALEXANDRIA, Va., June 2 -- United States Patent no. 12,647,111, issued on June 2, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Detection of leakage currents in intelligent semiconductor switch" was invented by Christian Djelassi-Tscheck (Villach, Austria) and Mario Tripolt (Ferndorf, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with an embodiment, a method includes activating a semiconductor switch coupled between a supply node and an output node to apply an output voltage to an electrical load coupled to the output node, wherein a supply voltage is provided to the supply node; and performing a leakage current test, comprising: deactivating the semiconductor switch ...