US Patent Issued to Infineon Technologies on July 28 for "Semiconductor device and method for manufacturing a semiconductor device" (German Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,517, issued on July 28, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device and method for manufacturing a semiconductor device" was invented by Michael Hell (Erlangen, Germany) and Rudolf Elpelt (Erlangen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor. The transistor includes gate trenches formed in a semiconductor substrate, extending in a first horizontal direction and patterning the semiconductor substrate into ridges. The ridges are arranged between two adjacent gate trenches, respectively. The transistor further includes a gate electrode arranged in at least...