ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,789, issued on July 14, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device including active diode area" was invented by Benedikt Stoib (Feldkirchen-Westerham, Germany), Hans-Joachim Schulze (Taufkirchen, Germany), Marten Muller (Schliersee, Germany), Daniel Schlogl (Villach, Austria), Moriz Jelinek (Villach, Austria) and Holger Schulze (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor body having first and second opposite surfaces along a vertical direction, and an active diode area. The active diode area includes: a p-doped anode region adjoining the fi...