US Patent Issued to Infineon Technologies on Aug. 4 for "Semiconductor device with Schottky contact" (Austrian, German Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,777, issued on Aug. 4, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device with Schottky contact" was invented by Ravi Keshav Joshi (Klagenfurt am Worthersee, Austria), Fabian Rasinger (Villach, Austria), Kristijan Luka Mletschnig (Klagenfurt, Austria), Romain Esteve (Munich) and Caspar Leendertz (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a semiconductor device is provided. The semiconductor device may include a semiconductor body including a first doped region of a first conductivity type and a second doped region of a second conductivity type. The semiconductor device may include a meta...