US Patent Issued to Infineon Technologies on Aug. 25 for "Semiconductor device with metal nitride layer and a method of manufacturing thereof" (Austrian, German Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,845, issued on Aug. 25, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Semiconductor device with metal nitride layer and a method of manufacturing thereof" was invented by Ravi Keshav Joshi (Klagenfurt am Worthersee, Austria), Romain Esteve (Munich), Saurabh Roy (Villach, Austria), Bernhard Goller (Villach, Austria), Werner Schustereder (Villach, Austria) and Kristijan Luka Mletschnig (Klagenfurt, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate and a metal nitride layer above the semiconductor substrate. The metal nitride layer forms at least one interface region with ...