ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,831, issued on Aug. 25, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Method for producing a SiC superjunction device" was invented by Moriz Jelinek (Villach, Austria), Jens Peter Konrath (Villach, Austria), Hans-Joachim Schulze (Taufkirchen, Germany) and Andre Rainer Stegner (Unterhaching, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method that includes: measuring at least one characteristic of a superjunction region of a SiC superjunction device, wherein the superjunction region is arranged in a semiconductor body and comprises a plurality of first regions of a first doping type and a plurality of second...