US Patent Issued to Infineon Technologies on Aug. 18 for "Magnetoresistive sensor having a shielding element with vortex magnetization" (German Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,710,488, issued on Aug. 18, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Magnetoresistive sensor having a shielding element with vortex magnetization" was invented by Bernhard Endres (Nabburg, Germany), Andreas STRABER (Regensburg, Germany) and Juergen Zimmer (Neubiberg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive sensor includes at least one magnetoresistive element having a layer stack. The layer stack has at least one free layer that has a magnetization that is changeable in the layer plane and that varies depending on the field strength of an external magnetic field acting parallel to the layer plane....