ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,701, issued on Aug. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Trench power device with enhanced charge carrier mobility" was invented by Saurabh Roy (Villach, Austria), Hans-Joachim Schulze (Taufkirchen, Germany), Oliver Blank (Villach, Austria), Josef Anton Moser (Sattendorf, Austria) and Thomas Aichinger (Faak am See, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power transistor device includes a semiconductor substrate, a gate trench extending into the semiconductor substrate, a transistor gate provided in the gate trench, and an insulating structure formed between the transistor gate and a side wall of the g...