US Patent Issued to Infineon Technologies on Aug. 11 for "Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor device" (Austrian, German Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,696, issued on Aug. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Method for manufacturing a contact on a silicon carbide semiconductor substrate, and silicon carbide semiconductor device" was invented by Saurabh Roy (Villach, Austria), Ravi Keshav Joshi (Klagenfurt am Worthersee, Austria), Hans-Joachim Schulze (Taufkirchen, Germany), Bernhard Goller (Villach, Austria) and Daria Krasnozhon (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to a method of manufacturing a contact on a silicon carbide semiconductor substrate wherein the method comprises providing a 4H-SiC semi...