ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,504, issued on April 14, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Shielding structure for silicon carbide devices" was invented by Michael Hell (Erlangen, Germany) and Caspar Leendertz (Munich).
According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide device includes: a planar gate structure on a first surface of a silicon carbide substrate, the planar gate structure having a gate length along a lateral first direction; a source region of a first conductivity type extending under the planar gate structure over at least part of the gate length; a body region of a second conductivity type, the body region including a chan...