US Patent Issued to Infineon Technologies Austria on Oct. 27 for "Temperature dependent driving of gate of III-nitride high electron mobility transistor" (Canadian Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,770, issued on Oct. 27, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Temperature dependent driving of gate of III-nitride high electron mobility transistor" was invented by Iman Abdali Mashhadi (Ottawa), Ahmad Mizannojehdehi (Stittsville, Canada), Kai Ha (Kanata, Canada), Vineet Unni (Kanata, Canada), Maryam Abbasi (Kanata, Canada) and Thomas Macelwee (Nepean, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "The driving of a gate terminal of a High Electron Mobility Transistor (HEMT) such that the magnitude of the signal depends on temperature. Such transistors allow power to be transferred with much less power loss tha...